Our belief in quality in all aspects of our business has translated to dedicated employees working together to offer to customers the highest quality CMOS wafer fabrication.

We offer 0.25-micron - 0.14-micron with derivatives and embedded flash CMOS manufacturing process. Key device features include dual gate oxide, low leakage, high speed, low power, mixed mode and embedded flash. Various options are available for each of these nodes, for example polyimide coating for stress relief, thick top metal for power management and inductors, redistribution layer for bumping packaging process and high resistivity substrate for noise suppression and RF applications.